activity
20192026
most citedFirst-principles study of point defects in LiGaO2

33 citations · 72 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2026

Symmetry breaking structural relaxation and optical transitions of native defects and carbon impurities in LiGaO

Klichchupong Dabsamut, Adisak Boonchun, Walter R. L. Lambrecht

LiGaO in a spinel type structure has recently been claimed to be an unintentional p-type ultra-wide-band-gap oxide semiconductor. While previous computational work did not…

cond-mat.mtrl-sci2023★ 3 cited

Computational study of defect complexes in -LiGaO and their relation to the donor-acceptor-pair recombination

Klichchupong Dabsamut, Adisak Boonchun, Walter R. L. Lambrecht

Hybrid functional calculations are presented for defects in LiGaO with the fraction of non-local exchange adjusted to reproduce the recently reported exciton gap of 6.0 eV. We…

cond-mat.mtrl-sci2022★ 10 cited

Theoretically proposed another stable polymorph of two-dimensional penta-PdPSe

Klichchupong Dabsamut, Intuon Chatratin, Thanasee Thanasarnsurapong +2

The theoretical discovery of new and stable 2D penta materials has stimulated the technological advancement due to the anticipated exotic properties of such structure, including th…

cond-mat.mtrl-sci2022★ 1 cited

Calculated electron paramagnetic resonance -tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO

Klichchupong Dabsamut, Adisak Boonchun, Walter R. L. Lambrecht

Various defects in ZnO, focused on substitutional N and N in various sites, O-site, interstitial and Zn-site are studied using first-principles calculations with the goal o…

cond-mat.mtrl-sci2022

Two-dimensional Penta-NiPS Sheets: Two Stable Polymorphs

Klichchupong Dabsamut, Thanasee Thanasarnsurapong, Intuon Chatratin +3

The discovery of new and stable two-dimensional (2D) materials with exotic properties is essential for technological advancement. Inspired by the recently reported penta-PdPSe, we…

cond-mat.mtrl-sci2022★ 11 cited

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate (CuSCN) and Defect-Healing by I Doping

Pimpisut Worakajit, Pinit Kidkhunthod, Saran Waiprasoet +4

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the dev…

cond-mat.mtrl-sci2022★ 5 cited

N, NO and O molecules in LiGaO in both Ga and Li sites and their relation to the vacancies

Klichchupong Dabsamut, Adisak Boonchun, Walter Lambrecht

Doping of the ultrawide band gap semicodnctor LiGaO ( eV) with N, NO and O molecules placed in either Ga or Li-vacancies is studied using first-principles calc…

cond-mat.mtrl-sci2019★ 9 cited

Computational Study of Electron Paramagnetic Resonance Spectra for Li and Ga Vacancies in LiGaO2

Dmitry Skachkov, Walter Lambrecht, Klichchupong Dabsamut +1

A computational study of the Electron Paramagnetic Resonance (EPR) -tensors and hyperfine tensors of Li and Ga vacancies in LiGaO is presented. Density Functinal Theory (DFT…

cond-mat.mtrl-sci2019★ 33 cited

First-principles study of point defects in LiGaO2

Adisak Boonchun, Klichchupong Dabsamut, Walter R. L. Lambrecht

The native point defects are studied in LiGaO2 using hybrid functional calculations. We find that the relative energy of formation of the cation vacancies and the cation antisite d…