output
20072025
most citedLarge Magnetoresistance of a Dilute -Si/SiGe/Si Quantum Well in a Parallel Magnetic Field

22 citations

9 papers

math.GR2025★ 2 cited

Intersections of Sylow 2-subgroups in symmetric groups

Sean Eberhard

We compute the asymptotic probability that a random pair of Sylow 2-subgroups in or intersects trivially. This calculation complements recent work of Diaconis, Giannell…

cs.LG2025★ 4 cited

Synthetic Tabular Data: Methods, Attacks and Defenses

Graham Cormode, Samuel Maddock, Enayat Ullah +1

Synthetic data is often positioned as a solution to replace sensitive fixed-size datasets with a source of unlimited matching data, freed from privacy concerns. There has been much…

cond-mat.mes-hall2013★ 5 cited

Acoustoelectric effects in very high-mobility -SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

I. L. Drichko, V. A. Malysh, I. Yu. Smirnov +4

The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility -SiGe/Ge/SiGe structure in the integer qua…

cond-mat.mes-hall2012

Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II

I. L. Drichko, I. Yu. Smirnov, A. V. Suslov +2

The magnetoresistance components and were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of…

cond-mat.mes-hall2010★ 6 cited

Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in -Si/SiGe/Si Structures with an Anisotropic Factor

I. L. Drichko, I. Yu. Smirnov, A. V. Suslov +2

Magnetoresistivity and and the acoustoelectronic effects are measured in -Si/SiGe/Si with an impurity concentration = 2 10 cm in th…

cond-mat.mes-hall2009★ 1 cited

Magnetoresistance in Dilute -Si/SiGe in Parallel and Tilted Magnetic Fields

I. L. Drichko, I. Yu. Smirnov, A. V. Suslov +2

We report the results of an experimental study of the magnetoresistance and in two samples of -Si/SiGe with low carrier concentrations =8.2 c…