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8 papers · 2 filters
Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals
Helin Cao, Suyang Xu, Ireneusz Miotkowski +4
We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural c…
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +4
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and th…
AFM and Raman studies of topological insulator materials subject to argon plasma etching
Isaac Childres, Jifa Tian, Ireneusz Miotkowski +1
Plasma etching is an important tool in nano-device fabrication. We report a study on argon plasma etching of topological insulator materials Bi2Se3, Bi2Te3, Sb2Te3 and Bi2Te2Se usi…
Channel Length Scaling of MoS2 MOSFETs
Han Liu, Adam T. Neal, Peide D. Ye
In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We…
Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition
Helin Cao, Rama Venkatasubramanian, Chang Liu +5
Topological insulator (TI) materials such as Bi2Te3 and Bi2Se3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based…
Ultrafast surface carrier dynamics in the topological insulator Bi2Te3
M. Hajlaoui, E. Papalazarou, J. Mauchain +9
We discuss the ultrafast evolution of the surface electronic structure of the topological insulator BiTe following a femtosecond laser excitation. Using time and angle reso…