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5 papers · 2 filters
Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
K. Hamaya, Y. Ando, K. Masaki +5
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in…
Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy
Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy +5
We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0…
Atomically Controlled Epitaxial Growth of Single-Crystalline Germanium Films on a Metallic Silicide
S. Yamada, K. Tanikawa, M. Miyao +1
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obt…
Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Y. Ando, S. Yamada, K. Kasahara +3
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. C…
Grain boundaries in ultrafine grained materials processed by severe plastic deformation and related phenomena
Xavier Sauvage, Gerhard Wilde, Sergiy Divinski +2
Grain boundaries in ultrafine grained (UFG) materials processed by severe plastic deformation (SPD) are often called "non-equilibrium" grain boundaries. Such boundaries are charact…