output
19972025
most citedAn accurate determination of the Avogadro constant by counting the atoms in a 28Si crystal

220 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

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Showing cond-mat.mes-hallShow all

6 papers · 1 filter

cond-mat.mes-hall2009★ 34 cited

Compendium for precise ac measurements of the quantum Hall resistance

F J Ahlers, B Jeanneret, F Overney +2

In view of the progress achieved in the field of the ac quantum Hall effect, the Working Group of the Comite Consultatif d'Electricite et Magnetisme (CCEM) on the AC Quantum Hall E…

cond-mat.mes-hall2003★ 23 cited

Effects of Metallic Gates on ac Measurements of the Quantum Hall Resistance

F. Overney, B. Jeanneret, B. Jeckelmann

Using a sample with a split back-gate, a linear frequency dependence of the ac quantum Hall resistance was observed. The frequency coefficient, which is due to dielectric losses pr…

cond-mat.mes-hall2002★ 20 cited

Electrometry on charge traps with a single-electron transistor

Miha Furlan, Sergey V. Lotkhov

Background charge fluctuators are studied individually by means of a modified single-electron pump. Operation of the device in a feedback mode allows electrometric sensing of the c…

cond-mat.mes-hall2000★ 7 cited

Modelling background charge rearrangements near single-electron transistors as a Poisson process

Heinz-Olaf Müller, Miha Furlan, Thomas Heinzel +1

Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable.…

cond-mat.mes-hall1999★ 18 cited

Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single electron transistors

M. Furlan, T. Heinzel, B. Jeanneret +2

The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single electron transistors is found to be non-Gaussian. A pronou…

cond-mat.mes-hall1997★ 93 cited

Electronic transport and the localization length in the quantum Hall effect

M. Furlan

We report on recent experimental results from transport measurements with large Hall bars made of high mobility GaAs/AlGaAs heterostructures. Thermally activated conductivities and…