activity
19932006
most citedElectronic transport and the localization length in the quantum Hall effect

93 citations · 173 across the 11 of their papers we have counts for

collaborators

11 papers

physics.ins-det2006★ 6 cited

Imaging of single infrared, optical, and ultraviolet photons using distributed tunnel junction readout on superconducting absorbers

Miha Furlan, Eugenie Kirk, Alex Zehnder

Single-photon imaging spectrometers of high quantum efficiency in the infrared to ultraviolet wavelength range, with good timing resolution and with a vanishing dark count rate are…

physics.ins-det2005

Cryogenic small-signal conversion with relaxation oscillations in Josephson junctions

Miha Furlan

Broadband detection of small electronic signals from cryogenic devices, with the option of simple implementation for multiplexing, is often a highly desired, although non-trivial t…

physics.ins-det2005★ 1 cited

New frequency-modulation readout based on relaxation oscillations

Miha Furlan, Eugenie Kirk, Alex Zehnder

Scaling of multi-pixel cryogenic detectors for imaging becomes increasingly difficult with size due to complexity of readout circuitry and cryogenic constraints (thermal load from…

physics.ins-det2005★ 3 cited

Self-cooling cryogenic microcalorimeters made of SINIS junctions

Miha Furlan, Eugenie Kirk, Alex Zehnder

High quality low leakage SINIS devices made of Al-AlMn-Al layers were fabricated for energy dispersive single photon detection. Information on different heat flow channels was extr…

cond-mat.mes-hall2002★ 20 cited

Electrometry on charge traps with a single-electron transistor

Miha Furlan, Sergey V. Lotkhov

Background charge fluctuators are studied individually by means of a modified single-electron pump. Operation of the device in a feedback mode allows electrometric sensing of the c…

cond-mat.mes-hall2000★ 7 cited

Modelling background charge rearrangements near single-electron transistors as a Poisson process

Heinz-Olaf Müller, Miha Furlan, Thomas Heinzel +1

Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable.…