Advanced Materials and Devices (United States)

most citedElectronic Nematicity Revealed by Polarized Ultrafast Spectroscopy in Bilayer La

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1 citations

researchers with a paper here

A. May1 · h 9
A. Tarasov1 · h 2
Bo Chen1 · h 5
Center for Correlative Microscopy1 · h 0
Chair Materials for Electrical Engineering1 · h 0
Chair of Metallic Materials TU Berlin1 · h 0
Cheng Xu1 · h 8
Chen Zhang1 · h 10
Chihang Luo1 · h 0
Christian Gobert1 · h 4
Christian Miersch1 · h 2
Chun-Hui Lv1 · h 1

collaborating institutions

Beijing Academy of Quantum Information SciencesCN1 paper
Central South UniversityCN1 paper
East China Normal UniversityCN1 paper
Fraunhofer Institute for Integrated Systems and Device TechnologyDE1 paper
Friedrich-Alexander-Universität Erlangen-NürnbergDE1 paper
Industrial Union of MetalworkersDE1 paper
Institute for Analytical InstrumentationRU1 paper
Institute of Psychology, Chinese Academy of SciencesCN1 paper
Intego (Germany)DE1 paper
Leibniz Institute of Surface EngineeringDE1 paper
Quantum Technologies (Sweden)SE1 paper
Saarland UniversityDE1 paper

Showing quant-phShow all

1 paper · 1 filter

quant-ph2026

Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes

Jannik H. Schwarberg, Fabian Magerl, Susanne Beuer +11

Silicon vacancies ( $V_{Si}$ ) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor p…