Impact of Surface Treatment on Noise in PL-Measurements of Silicon Vacancies in 4H-SiC Lateral pin-Diodes

Jannik H. Schwarberg, Fabian Magerl, Susanne Beuer +11

Silicon vacancies ($V_{\mathrm{Si}}$) in 4H-SiC are promising candidates for quantum technologies due to their long spin coherence times and integrability into mature semiconductor p…