output
20032025
most citedHigh-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

344 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

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Showing cond-mat.mes-hallShow all

4 papers · 1 filter

cond-mat.mes-hall2016★ 4 cited

Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs

Amit Verma, Kazuki Nomoto, Wan Sik Hwang +3

Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide hete…

cond-mat.mes-hall2014★ 79 cited

Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors

Sara Fathipour, Maja Remskar, Ana Varlec +8

We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown b…

cond-mat.mes-hall2013★ 344 cited

High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

Wan Sik Hwang, Amit Verma, Hartwin Peelaers +11

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smal…

cond-mat.mes-hall2013★ 92 cited

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Wan Sik Hwang, Pei Zhao, Kristof Tahy +11

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap…