Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Centre National de la Recherche ScientifiqueFR2.1k papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR2k papers
- Institut National de Physique Nucléaire et de Physique des ParticulesFR1.9k papers
- University of California, RiversideUS1.9k papers
- University of VirginiaUS1.8k papers
- Rice UniversityUS1.8k papers
- Fermi National Accelerator LaboratoryUS1.8k papers
- Princeton UniversityUS1.8k papers
- Charles UniversityCZ1.8k papers
- University of Maryland, College ParkUS1.7k papers
- Tata Institute of Fundamental ResearchIN1.7k papers
- University of Notre DameUS1.7k papers
11 papers · 2 filters
Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe
M. V. Yakunin, A. V. Suslov, M. R. Popov +3
We present the first experimental study of the double-quantum-well (DQW) system made of 2D layers with inverted energy band spectrum: HgTe. The magnetotransport reveals a considera…
Metal to insulator quantum-phase transition in few-layered ReS
Nihar R. Pradhan, Amber McCreary, Daniel Rhodes +11
In ReS a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS crystallizes in the 1T-structure which l…
Optoelectronic switch based on intrinsic dual Schottky diodes in ambipolar MoSe field-effect transistors
Nihar R. Pradhan, Zhengguang Lu, Daniel Rhodes +3
Here, we report the observation of a hitherto unreported optoelectronic effect, namely a light-induced diode-like response in multi-layered MoSe field-effect transistors whose…
Monte Carlo studies of the properties of the Majorana quantum error correction code: is self-correction possible during braiding?
Fabio L. Pedrocchi, N. E. Bonesteel, David P. DiVincenzo
The Majorana code is an example of a stabilizer code where the quantum information is stored in a system supporting well-separated Majorana Bound States (MBSs). We focus on one-dim…
Resonant single and multi-photon coherent transitions in a detuned regime
S. Bertaina, M. Martens, M. Egels +2
We performed quantum manipulations of the multi-level spin system S=5/2 of a Mn ion, by means of a two-tone pulse drive. The detuning between the excitation and readout radi…
Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
Junjie Wang, Daniel Rhodes, Simin Feng +7
Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides…
Spin-Orbit Coupling Fluctuations as a Mechanism of Spin Decoherence
M. Martens, G. Franco, N. S. Dalal +2
We discuss a general framework to address spin decoherence resulting from fluctuations in a spin Hamiltonian. We performed a systematic study on spin decoherence in the compound K$…
NMR detection of dynamical processes in antiferroelectric nanoclusters during the order-disorder transition in NH4H2AsO4
R. Fu, O. Gunaydin-Sen, I. Chiorescu +1
We study the dynamics of inorganic antiferroelectric nanoclusters formed during an order-disorder transition and demonstrate the coexistence of the two phases in a region of 2-3 K…
Metal-to-Insulator Switching in Quantum Anomalous Hall States
Xufeng Kou, Lei Pan, Jing Wang +8
After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic t…
Evidence for Half-Metallicity in n-type HgCr2Se4
Tong Guan, Chaojing Lin, Chongli Yang +8
High quality HgCrSe single crystals have been investigated by magnetization, electron transport and Andreev reflection spectroscopy. In the ferromagnetic ground state, the…
Hall and field-effect mobilities in few layered -WSe field-effect transistors
N. R. Pradhan, D. Rhodes, S. Memaran +9
Here, we present a temperature () dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe exfoliated onto SiO.…