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20012026
most citedAdvances in the Physics of Magnetic Skyrmions and Perspective for Technology

2.4k citations

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Showing 2006Show all

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cond-mat.mtrl-sci2006★ 134 cited

Semiconductors between spin-polarized source and drain

A. Fert, J. -M. George, H. Jaffres +1

Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually,…

cond-mat.other2006★ 8 cited

Influence of topography and Co domain walls on the magnetization reversal of the FeNi layer in FeNi/AlO/Co magnetic tunnel junctions

Fabien Romanens, Jan Vogel, Wolfgang Kuch +5

We have studied the magnetization reversal dynamics of FeNi/AlO/Co magnetic tunnel junctions deposited on step-bunched Si substrates using magneto-optical Kerr effect and…

cond-mat.other2006★ 46 cited

Electrical spin injection into p-doped quantum dots through a tunnel barrier

L. Lombez, P. Renucci, P. Gallo +14

We have demonstrated by electroluminescence the injection of spin polarized electrons through Co/Al2O3/GaAs tunnel barrier into p-doped InAs/GaAs quantum dots embedded in a PIN GaA…

cond-mat.str-el2006★ 165 cited

Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films

H. Bea, M. Bibes, S. Cherifi +8

We report on the functionalization of multiferroic BiFeO3 epitaxial films for spintronics. A first example is provided by the use of ultrathin layers of BiFeO3 as tunnel barriers i…

cond-mat.mtrl-sci2006★ 98 cited

Spin injection in a single metallic nanoparticle: a step towards nanospintronics

A. Bernand-Mantel, P. Seneor, N. Lidgi +8

We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Cou…