2.5k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- ETH ZurichCH630 papers
- Paul Scherrer InstituteCH136 papers
- École Polytechnique Fédérale de LausanneCH61 papers
- University of ZurichCH45 papers
- University of RegensburgDE44 papers
- Institute of PhysicsPL39 papers
- Centre National de la Recherche ScientifiqueFR37 papers
- Swiss Light Source37 papers
- Polish Academy of SciencesPL36 papers
- P.L. Kapitza Institute for Physical ProblemsRU26 papers
- National Institute for Materials ScienceJP25 papers
- University of GenevaCH23 papers
17 papers · 2 filters
Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
Luca Sapienza, Jin Liu, Jin Dong Song +4
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm Ga…
Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields
Hiske Overweg, Hannah Eggimann, Ming-Hao Liu +10
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilaye…
Anisotropy and suppression of spin--orbit interaction in a GaAs double quantum dot
Andrea Hofmann, Ville F. Maisi, Tobias Krähenmann +4
The spin-flip tunneling rates are measured in GaAs-based double quantum dots by time-resolved charge detection. Such processes occur in the Pauli spin blockade regime with two elec…
Distribution of current fluctuations in a bistable conductor
S. Singh, J. T. Peltonen, I. M. Khaymovich +3
We measure the full distribution of current fluctuations in a single-electron transistor with a controllable bistability. The conductance switches randomly between two levels due t…
Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
Matija Karalic, Susanne Mueller, Christopher Mittag +8
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a…
Nanosecond-timescale spin transfer using individual electrons in a quadruple-quantum-dot device
T. A. Baart, N. Jovanovic, C. Reichl +2
The ability to coherently transport electron-spin states between different sites of gate-defined semiconductor quantum dots is an essential ingredient for a quantum-dot-based quant…
Coherent spin-exchange via a quantum mediator
T. A. Baart, T. Fujita, C. Reichl +2
Coherent interactions at a distance provide a powerful tool for quantum simulation and computation. The most common approach to realize an effective long-distance coupling 'on-chip…
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime
T. A. Baart, P. T. Eendebak, C. Reichl +2
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots…
Investigating Energy Scales of Fractional Quantum Hall States using Scanning Gate Microscopy
Beat A. Braem, Tobias Krähenmann, Szymon Hennel +4
We use the voltage biased tip of a scanning force microscope at a temperature of 35\,mK to locally induce the fractional quantum Hall state of in a split-gate defined const…
Classical origin of conductance oscillations in an integrable cavity
Christina Pöltl, Aleksey Kozikov, Klaus Ensslin +5
Scanning gate microscopy measurements in a circular ballistic cavity with a tip placed near its center yield a non-monotonic dependence of the conductance on the tip voltage. Detai…
Measurement back-action in stacked graphene quantum dots
Dominik Bischoff, Marius Eich, Oded Zilberberg +3
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device cons…
Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations
Han-Chun Liu, Tianyu Ye, W. Wegscheider +1
Linear polarization angle, , dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, , in high mobility GaAs/AlGaAs 2D electron devices…
Scanning gate imaging in confined geometries
R. Steinacher, A. A. Kozikov, C. Rössler +4
This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the br…
Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography
Nikola Pascher, Szymon Hennel, Susanne Mueller +1
A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography…
Current-controlled Spin Precession of Quasi-Stationary Electrons in a Cubic Spin-Orbit Field
P. Altmann, F. G. G. Hernandez, G. J. Ferreira +4
Space- and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backw…
Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases
F. Schläpfer, W. Dietsche, C. Reichl +2
The quest for extremely high mobilities of 2d electron gases in MBE-grown heterostructures is hampered by the available purity of the starting materials, particularly of the galliu…
Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation
Matthias Berl, Lars Tiemann, Werner Dietsche +2
We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, ou…