61 citations
- University of Chinese Academy of SciencesCN5 papers
- Chinese Academy of SciencesCN4 papers
- Institute of MicroelectronicsCN4 papers
- Beijing Normal UniversityCN3 papers
- Wuhan UniversityCN2 papers
- Academy of Opto-ElectronicsCN1 paper
- ARC Centre of Excellence in Future Low-Energy Electronics TechnologiesAU1 paper
- Beijing University of TechnologyCN1 paper
- Centre for Disruptive Photonic TechnologiesSG1 paper
- Centre for Quantum TechnologiesSG1 paper
- Georgia Southern UniversityUS1 paper
- International Centre for Theoretical Physics Asia-PacificCN1 paper
Showing 2021 · physics.app-phShow all
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physics.app-ph2021★ 61 cited
Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure
Fengbin Tian, Shujing Zhao, Hao Xu +9
We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate s…
physics.app-ph2021★ 59 cited
Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure
Shujing Zhao, Fengbin Tian, Hao Xu +8
We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiO2/Si (MFIS) gate structure. We propose a method of experimentally extracting the numbe…