most citedImpact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

61 citations · 144 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2022★ 24 cited

First-principles study of oxygen vacancy defects in orthorhombic HfZrO/SiO/Si gate stack

Junshuai Chai, Hao Xu, Jinjuan Xiang +9

The gate defect of the ferroelectric HfO-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an ef…

physics.app-ph2021★ 61 cited

Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

Fengbin Tian, Shujing Zhao, Hao Xu +9

We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate s…

physics.app-ph2021★ 59 cited

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Shujing Zhao, Fengbin Tian, Hao Xu +8

We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiO2/Si (MFIS) gate structure. We propose a method of experimentally extracting the numbe…