61 citations · 144 across the 3 of their papers we have counts for
4 papers
First-principles study of oxygen vacancy defects in orthorhombic HfZrO/SiO/Si gate stack
Junshuai Chai, Hao Xu, Jinjuan Xiang +9
The gate defect of the ferroelectric HfO-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an ef…
Impact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure
Fengbin Tian, Shujing Zhao, Hao Xu +9
We study the impact of different interlayers and ferroelectric materials on charge trapping during the endurance fatigue of Si FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) gate s…
Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure
Shujing Zhao, Fengbin Tian, Hao Xu +8
We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf0.5Zr0.5O2/SiO2/Si (MFIS) gate structure. We propose a method of experimentally extracting the numbe…
Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors
Yuanyuan Zhang, Xiaoqing Sun, Junshuai Chai +6
This paper investigates the thermodynamic driving force of transient negative capacitance (NC) in the series circuit of the resistor and ferroelectric capacitor (R-FEC). We find th…