output
20082025
most citedImpact of Interlayer and Ferroelectric Materials on Charge Trapping during Endurance Fatigue of FeFET with TiN/HfxZr1-xO2/interlayer/Si (MFIS) Gate Structure

61 citations

13 papers

cond-mat.supr-con2025★ 1 cited

Interfacial superconductivity in the type-III heterostructure SnSe/PtTe

Jun Fan, Xiao-Le Qiu, Zhong-Yi Lu +2

Interfacial superconductivity (IS) has been a topic of intense interest in the condensed matter physics, due to its unique properties and exotic photoelectrical performance. Howeve…

cond-mat.mes-hall2024★ 6 cited

Generic Approach to Intrinsic Magnetic Second-order Topological Insulators via Inverted Orbitals

Zhao Liu, Bing Liu, Yuefeng Yin +1

The integration of intrinsically magnetic and topologically nontrivial two-dimensional materials holds tantalizing prospects for the exotic quantum anomalous Hall insulators and ma…

gr-qc2023★ 16 cited

Dynamics of null particles and shadow for general rotating black hole

Kun Meng, Xi-Long Fan, Song Li +2

The Johannsen black hole (BH) is a generic rotating BH admitting three constants of motions (energy, angular momentum, and Carter constant) and is characterized by four deviation p…

quant-ph2022★ 6 cited

Experimental demonstration of Quantum Overlapping Tomography

Yang Zhengning, Shihao Ru, Lianzhen Cao +2

Quantum tomography is one of the major challenges of large-scale quantum information research due to the exponential time complexity. In this work, we develop and apply a Bayesian…

cond-mat.mtrl-sci2022★ 24 cited

First-principles study of oxygen vacancy defects in orthorhombic HfZrO/SiO/Si gate stack

Junshuai Chai, Hao Xu, Jinjuan Xiang +9

The gate defect of the ferroelectric HfO-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an ef…

hep-th2021★ 8 cited

Circuit complexity in proca theory

Kun Meng, Meihua Deng, Jiaqiang Zhao +1

In this paper, we study circuit complexity in Proca theory with Nielsen's approach and Fubini-Study (FS) metric approach. We place the fields on a lattice to gain a regularized the…