Spectral Energies (United States)

most citedProspects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics

73 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

A. Voevodin1 · h 70
A. Wills1 · h 30
B. Fåk1 · h 2
C. Baines1 · h 0
C. Wang1 · h 2
D. Boldrin1 · h 7
D. Chatterjee1 · h 0
D. Snyder1 · h 27
E. Kermarrec1 · h 18
F. Bert1 · h 4
Gregory Pastir1 · h 1
G. Simutis1 · h 2

collaborating institutions

Chalmers University of TechnologySE1 paper
ETH ZurichCH1 paper
Institut Laue-LangevinFR1 paper
KTH Royal Institute of TechnologySE1 paper
Laboratoire de physique des SolidesFR1 paper
Pennsylvania State UniversityUS1 paper
Science and Engineering Services (United States)US1 paper
Ten Chen HospitalTW1 paper
United States Air Force Research LaboratoryUS1 paper
Université Paris-SaclayFR1 paper
University College LondonGB1 paper
University of GlasgowGB1 paper

Showing cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2013★ 73 cited

Prospects of Direct Growth Boron Nitride Films as Substrates for Graphene Electronics

Michael S. Bresnehan, Matthew J. Hollander, Maxwell Wetherington +8

We present a route for direct growth of boron nitride via a polyborazylene to h-BN conversion process. This two-step growth process ultimately leads to a >25x reduction in the RMS…