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19932026
most citedStatic conductivity of charged domain wall in uniaxial ferroelectric-semiconductors

242 citations

Showing 2018Show all

6 papers · 1 filter

cond-mat.mes-hall2018★ 8 cited

Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well

G. M. Gusev, O. E. Raichev, E. B. Olshanetsky +4

The thermoelectric response of HgTe quantum wells in the state of two-dimensional topological insulator (2D TI) has been studied experimentally. Ambipolar thermopower, typical for…

cond-mat.mes-hall2018★ 15 cited

Optical excitation of single- and multi-mode magnetization precession in Galfenol nanolayers

A. V. Scherbakov, A. P. Danilov, F. Godejohann +9

We demonstrate a variety of precessional responses of the magnetization to ultrafast optical excitation in nanolayers of Galfenol (Fe,Ga), which is a ferromagnetic material with la…

cond-mat.mes-hall2018★ 16 cited

Optically driven spin pumping mediating collective magnetization dynamics in a spin valve structure

A. P. Danilov, A. V. Scherbakov, B. A. Glavin +9

We demonstrate spin pumping, i.e. the generation of a pure spin current by precessing magnetization, without application of microwave radiation commonly used in spin pumping experi…

cond-mat.mes-hall2018

Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures

Evgen O. Melezhik, Fiodor F. Sizov, Nikolai N. Mikhailov +1

Dynamical screening function of the two-dimensional electron gas in wide HgTe quantum well (QW) has been numerically modelled in this work. Calculations were provided in the Random…

cond-mat.mtrl-sci2018★ 9 cited

Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresi…

cond-mat.mes-hall2018★ 7 cited

Integer Quantum Hall Effect in Graphene Channel with p-n Junction at Domain Wall in Ferroelectric Substrate

Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska

We revealed that 180 degree ferroelectrics domain walls (FDWs) in a ferroelectric substrate, which induce p-n junctions in a graphene channel, lead to the nontrivial temperature an…