87 citations
- National Academy of Sciences of UkraineUA19 papers
- Frantsevich Institute for Problems in Materials ScienceUA11 papers
- Institute of PhysicsPL11 papers
- Taras Shevchenko National University of KyivUA10 papers
- Oak Ridge National LaboratoryUS8 papers
- Institute of Semiconductor PhysicsRU7 papers
- Universidade de São PauloBR7 papers
- Institute of High Pressure PhysicsPL5 papers
- Novosibirsk State UniversityRU5 papers
- Bogolyubov Institute for Theoretical PhysicsUA3 papers
- Centre National de la Recherche ScientifiqueFR3 papers
- Institut d'Électronique et des SystèmesFR3 papers
32 papers · 1 filter
Molecular dynamics simulation study of mechanical properties of 3C-SiC with extended defects
Serhii Shmahlii, Andrey Sarikov
In this study, large-scale molecular dynamics simulations with the Vashishta potential and the analytic bond-order potential (ABOP) were performed to investigate the effect of exte…
Sizes of Ferroelectricity Appearance and Disappearence in Nanosized Hafnia-Zirconia:Landau-type Theory
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin +1
Nanosized hafnia-zirconia HfxZr1-xO2 in the form of thin films, multilayers and heterostructures are indispensable silicon-compatible ferroelectric materials for advanced electroni…
3D lattice Monte Carlo modeling of morphology formation of Si/SiOx nanocomposites during phase separation of nonstoichiometric Si oxide films
Ivan Oliinyk, Andrey Sarikov
In this paper, a three-dimensional lattice model based on the Monte Carlo approach is presented. This model is developed to investigate the kinetics of morphology change during pha…
Identification of formation of amorphous Si phase in SiOxNy films produced by plasma enhanced chemical vapor deposition
M. V. Voitovych, A. Sarikov, V. O. Yukhymchuk +2
Peculiarities of formation of inclusions of amorphous Si (a-Si) phase in Si-rich Si oxynitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are studied by combi…
Stable partial dislocation complexes in GaN as charge carrier lifetime modifiers for terahertz device applications by molecular dynamics and first-principle simulations
Andrey Sarikov, Ihor Kupchak
Wurtzite GaN is a promising material for applications in photoconductive THz radiation sources. For this purpose, the photogenerated charge carriers lifetime of the order of tenths…
Anomalous Behavior of the Dielectric and Pyroelectric Responses of Ferroelectric Fine-Grained Ceramics
Oleksandr S. Pylypchuk, Serhii E. Ivanchenko, Mykola Y. Yelisieiev +12
We revealed the anomalous temperature behavior of the giant dielectric permittivity and unusual frequency dependences of the pyroelectric response of the fine-grained ceramics prep…