120 citations
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Showing 2016Show all
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cond-mat.mes-hall2016★ 5 cited
Band Offset in (Ga,In)As/Ga(As,Sb) Heterostructures
S. Gies, M. J. Weseloh, C. Fuchs +5
A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL varia…
cond-mat.mtrl-sci2016★ 34 cited
Configuration Dependence of Band Gap Narrowing and Localization in Dilute GaAs_{1-x} Bi_x Alloys
Lars C. Bannow, Oleg Rubel, Phil Rosenow +5
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in galli…