662 citations
- ETH ZurichCH50 papers
- IBM (United States)US20 papers
- École Polytechnique Fédérale de LausanneCH14 papers
- IBM Research - Thomas J. Watson Research CenterUS9 papers
- University of BaselCH9 papers
- University of ZurichCH9 papers
- Centre National de la Recherche ScientifiqueFR7 papers
- Swiss Federal Laboratories for Materials Science and TechnologyCH7 papers
- Universidade de Santiago de CompostelaES6 papers
- Forschungszentrum JülichDE5 papers
- Center for Research in Molecular Medicine and Chronic DiseasesES4 papers
- Chalmers University of TechnologySE4 papers
9 papers · 1 filter
Heterogeneous Mapping for Analog In-Memory Computing Accelerators: A Unified Workflow
Corey Lammie
Analog In-Memory Computing (AIMC) accelerators execute matrix-vector multiplications directly within memory arrays, reducing data movement and improving DNN inference efficiency. T…
CiMBA: Accelerating Genome Sequencing through On-Device Basecalling via Compute-in-Memory
William Andrew Simon, Irem Boybat, Riselda Kodra +8
As genome sequencing is finding utility in a wide variety of domains beyond the confines of traditional medical settings, its computational pipeline faces two significant challenge…
Efficient transformer adaptation for analog in-memory computing via low-rank adapters
Chen Li, Elena Ferro, Corey Lammie +3
Analog In-Memory Computing (AIMC) offers a promising solution to the von Neumann bottleneck. However, deploying transformer models on AIMC remains challenging due to their inherent…
A Precision-Optimized Fixed-Point Near-Memory Digital Processing Unit for Analog In-Memory Computing
Elena Ferro, Athanasios Vasilopoulos, Corey Lammie +4
Analog In-Memory Computing (AIMC) is an emerging technology for fast and energy-efficient Deep Learning (DL) inference. However, a certain amount of digital post-processing is requ…
High-Conductance, Ohmic-like HfZrO Ferroelectric Memristor
Laura Bégon-Lours, Mattia Halter, Youri Popoff +3
The persistent and switchable polarization of ferroelectric materials based on HfO-based ferroelectric compounds, compatible with large-scale integration, are attractive synapt…
A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory
Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda +6
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO layer is fabricated at a low thermal budget (~375C), enabling BEOL processes…