activity
20232026
most citedAll-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices

14 citations · 40 across the 11 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2026

Computing at the Edge Enabled by Indoor Photovoltaics and Ferroelectrics

Robert L. Z. Hoye, Markus Hellenbrand, Nuno Estrócio +17

The exponential, pervasive rise of artificial intelligence (AI), hosted in large data centres, will test the limits of the underpinning infrastructure, including electricity and wa…

cs.ET2026★ 4 cited

Update Disturbance-Resilient Analog ReRAM Crossbar Arrays for In-Memory Deep Learning Accelerators

Wooseok Choi, Tommaso Stecconi, Donato Francesco Falcone +14

Resistive memory (ReRAM) technologies with crossbar array architectures hold significant potential for analog AI accelerator hardware, enabling both in-memory inference and trainin…

cs.ET2026★ 1 cited

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM via Compact Modeling

Matteo Galetta, Donato Francesco Falcone, Victoria Clerico +7

Resistive Random Access Memory (ReRAM) devices offer a promising solution for next-generation non-volatile memory and neuromorphic computing systems. Yet, existing compact models f…

cs.ET2026

Analog Weight Update Rule in Ferroelectric Hafnia, using pico-Joule Programming Pulses

Alexandre Baigol, Nikhil Garg, Matteo Mazza +5

In an effort to compete with the brain's efficiency at processing information, neuromorphic hardware combines artificial synapses and neurons using mixed-signal circuits and emergi…

cs.NE2025

Unsupervised local learning based on voltage-dependent synaptic plasticity for resistive and ferroelectric synapses

Nikhil Garg, Ismael Balafrej, Joao Henrique Quintino Palhares +11

The deployment of AI on edge computing devices faces significant challenges related to energy consumption and functionality. These devices could greatly benefit from brain-inspired…

cs.ET2025★ 13 cited

Analytical Modelling of the Transport in Analog Filamentary Conductive-Metal-Oxide/HfOx ReRAM Devices

Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi +4

The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog fi…

cs.ET2025

Energy-convergence trade off for the training of neural networks on bio-inspired hardware

Nikhil Garg, Paul Uriarte Vicandi, Yanming Zhang +5

The increasing deployment of wearable sensors and implantable devices is shifting AI processing demands to the extreme edge, necessitating ultra-low power for continuous operation.…

cond-mat.mtrl-sci2025

Electroforming Kinetics in HfOx/Ti RRAM: Mechanisms Behind Compositional and Thermal Engineering

Manasa Kaniselvan, Kevin Portner, Donato Francesco Falcone +6

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltag…

cs.ET2025

Hardware Implementation of Ring Oscillator Networks Coupled by BEOL Integrated ReRAM for Associative Memory Tasks

Wooseok Choi, Thomas van Bodegraven, Jelle Verest +8

We demonstrate the first hardware implementation of an oscillatory neural network (ONN) utilizing resistive memory (ReRAM) for coupling elements. A ReRAM crossbar array chip, integ…

eess.SP2025

Edge Training and Inference with Analog ReRAM Technology for Hand Gesture Recognition

Victoria Clerico, Anirvan Dutta, Donato Francesco Falcone +8

Tactile hand gesture recognition is a crucial task for user control in the automotive sector, where Human-Machine Interactions (HMI) demand low latency and high energy efficiency.…

cs.ET2025★ 14 cited

All-in-One Analog AI Hardware: On-Chip Training and Inference with Conductive-Metal-Oxide/HfOx ReRAM Devices

Donato Francesco Falcone, Victoria Clerico, Wooseok Choi +9

Analog in-memory computing is an emerging paradigm designed to efficiently accelerate deep neural network workloads. Recent advancements have focused on either inference or trainin…

cs.AR2023★ 8 cited

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda +6

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS i…