6 citations
- Forschungszentrum JülichDE2 papers
- Roma Tre UniversityIT2 papers
- European Synchrotron Radiation FacilityFR1 paper
- Institute of Nanostructured MaterialsIT1 paper
- Institute of Structure of MatterIT1 paper
- Istituto NanoscienzeIT1 paper
- Qi2US1 paper
- Queen Mary University of LondonGB1 paper
- Technical University of DenmarkDK1 paper
- Technische Universität BerlinDE1 paper
- University of FlorenceIT1 paper
- University of PisaIT1 paper
3 papers
cond-mat.mes-hall2026
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…
cond-mat.mtrl-sci2026★ 6 cited
Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices
Patrizio Graziosi, Damiano Marian, Andrea Tomadin +9
The integration of thermoelectric devices into mainstream microelectronic technological platform could be a major breakthrough in various fields within the \emph{so-called} Green-I…
quant-ph2026
On-chip semi-device-independent quantum random number generator exploiting contextuality
Maddalena Genzini, Caterina Vigliar, Mujtaba Zahidy +6
We present a semi-device-independent quantum random number generator (QRNG) based on the violation of a contextuality inequality, implemented by the integration of two silicon phot…