most citedEpitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices

6 citations

5 papers

cond-mat.mtrl-sci20266 cited

Epitaxial SiGeSn alloys for CMOS-compatible thermoelectric devices

Patrizio Graziosi, Damiano Marian, Andrea Tomadin +9

The integration of thermoelectric devices into mainstream microelectronic technological platform could be a major breakthrough in various fields within the \emph{so-called} Green-I…

cond-mat.mtrl-sci20261 cited

Carrier scattering considerations and thermoelectric power factors of half-Heuslers

Rajeev Dutt, Bhawna Sahni, Yao Zhao +7

The electronic and thermoelectric (TE) transport properties of 13 n-type and p-type half-Heusler alloys are computationally examined using Boltzmann transport. The electronic scatt…

astro-ph.GA2026

CO Diffusion on Interstellar Amorphous Solid Water: A Computational Study

Francesco Benedetti, Mauro Satta, Tommaso Grassi +2

Surface chemistry on interstellar dust grains is recognized as a central component in astrochemical models, representing a plausible formation route for many of the observed comple…

cond-mat.mtrl-sci202628 cited

Artificial Intelligence in Materials Science and Engineering: Current Landscape, Key Challenges, and Future Trajectorie

Iman Peivaste, Salim Belouettar, Francesco Mercuri +15

Artificial Intelligence is rapidly transforming materials science and engineering, offering powerful tools to navigate complexity, accelerate discovery, and optimize material desig…

cond-mat.mtrl-sci20254 cited

Thermoelectric transport and the role of different scattering processes in the half-Heusler NbFeSb

Bhawna Sahni, Yao Zhao, Zhen Li +3

We perform an ab initio computational investigation of the electronic and thermoelectric transport properties of one of the best performance half-Heusler (HH) alloys, NbFeSb. We us…