8 papers
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…
Multi-level Ï-junction in a proximitized Ge/SiGe quantum dot probed by an on-chip superconducting microwave resonator
Luigi Ruggiero, Vera Jo Weibel, Pauline Drexler +5
Using on-chip microwave measurements, we investigate multilevel -junctions formed by proximitized quantum dot (QD) in a germanium (Ge)/silicon-germanium (SiGe) heterostructure.…
Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
Lukas Cvitkovich, Peter Stano, Dominique Bougeard +2
Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley s…
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter +3
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from furthe…
High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
Luigi Ruggiero, Carlo Ciacca, Pauline Drexler +5
Superconducting resonators integrated with Ge quantum wells (QWs) offer a promising platform for hybrid quantum devices. Yet, in the most common heterostructure architectures, they…
Active Noise Reduction in Si/SiGe Gated Quantum Dots
Rajat Bharadwaj, Parvathy Gireesan, Harikrishnan Sundaresan +5
Solid-state quantum technologies such as quantum dot qubits and quantum electrical metrology circuits rely on quantum phenomena at ultra-low energies, making them highly sensitive…