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physics.app-ph2020★ 15 cited
Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review
Yu Song, Su-Huai Wei
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement…
physics.app-ph2020★ 24 cited
Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures
Yu Song, Guanghui Zhang, Xue-Fen Cai +6
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-si…