24 citations · 53 across the 6 of their papers we have counts for
6 papers
Emerging Oscillating Reactions at the Insulator/Semiconductor Solid/Solid Interface via Proton Implantation
Dechao Meng, Guanghui Zhang, Ming Li +15
Most oscillating reactions (ORs) happen in solutions. Few existing solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or solid/liquid interfaces, or at the a…
Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures
Yu Song, Guanghui Zhang, Xue-Fen Cai +6
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-si…
Ultra-Slow Dynamic Annealing of Neutron-induced Defects in n-type Silicon: Role of Charge Carriers
Ying Zhang, Yang Liu, Hang Zhou +3
Neutron bombardments with equivalent fluence (110 cm) and different fluxes (10 cms to 10 cms) have bee…
Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors
Yu Song, Ying Zhang, Yang Liu +6
The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We fin…
Linear Dependence of Post-irradiation Input Bias Currents on Pre-irradiation Values in Silicon Bipolar Microcircuits
Yu Song, Jie Zhao, Shun Li +7
We find in experiments a linear dependence of ionization irradiation-induced degradations on pre-irradiation values of the input bias current in bipolar devices with simple input s…
Strong Proton-Defect Interaction in Synergistic Irradiation Damage System
Ying Zhang, Yang Liu, Jie Zhao +3
We experimentally investigated total ionizing dose (TID) response of the input-stage PNP transitor in an operational amplifier LM324N with various initial displacement damage (IDD)…