Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

C. Weiss, S. Park, J. Lefèvre +7

We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (${\tau }_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using th…