17 citations
- Centre National de la Recherche ScientifiqueFR3 papers
- Chalmers University of TechnologySE2 papers
- AlistoreFR1 paper
- CEA Paris-SaclayFR1 paper
- Centre for Electrochemical TechnologiesES1 paper
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR1 paper
- Dekra (Czechia)CZ1 paper
- École PolytechniqueFR1 paper
- Fraunhofer Institute for Solar Energy SystemsDE1 paper
- Institut de Chimie et des Matériaux Paris-EstFR1 paper
- Institut National de Physique Nucléaire et de Physique des ParticulesFR1 paper
- Institut Rayonnement-Matière de SaclayFR1 paper
6 papers
Machine Learning-Assisted Multi-Objective Optimization of Battery Manufacturing from Synthetic Data Generated by Physics-Based Simulations
Marc Duquesnoy, Chaoyue Liu, Diana Zapata Dominguez +3
The optimization of the electrodes manufacturing process constitutes one of the most critical steps to ensure high-quality Lithium-Ion Battery (LIB) cells, in particular for automo…
5G Features and Standards for Vehicle Data Exploitation
Gorka Velez, Edoardo Bonetto, Daniele Brevi +6
Cars capture and generate huge volumes of data in real-time about the driving dynamics, the environment, and the driver and passengers' activities. Due to the proliferation of coop…
Impact of Surface Chemistry of Silicon Nanoparticles on the Structural and Electrochemical Properties of Si/Ni3.4Sn4 Com-posite Anode for Li-Ion Batteries
Tahar Azib, Claire Thaury, Fermin Cuevas +4
Embedding silicon nanoparticles in an intermetallic matrix is a promising strategy to produce remarkable bulk anode materials for lithium-ion (Li-ion) batteries with low potential,…
Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics
C. Weiss, S. Park, J. Lefèvre +7
We report on the effect of electron and proton irradiation on effective minority carrier lifetimes () in p-type Ge wafers. Minority carrier lifetimes are assessed using th…
Optical characterization of dislocation free Ge and GeOI wafers
S. Kalem, I. Romandic, A. Theuwis
Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-oninsulator(GeOI) wafers have been characterized using Fourier transformed infrared spectroscop…
Transformation of germanium to fluogermanates
S. Kalem, O. Arthursson, I. Romandic
The surface of a single crystal Germanium wafer was transformed to crystals of germanium fluorides and oxides upon exposure to a vapor of HF and HNO3 chemical mixture. Structure an…