activity
20042025
most citedBlack Silicon with high density and high aspect ratio nanowhiskers

35 citations · 141 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2025★ 4 cited

Time-resolved radiative recombination in black silicon

Seref Kalem

Black silicon (b-Si) has been receiving a great deal of interest for its potential to be used in applications ranging from sensors to solar cells and electrodes in batteries due to…

cond-mat.mtrl-sci2021★ 1 cited

Defect studies in strain-relaxed SiGe alloys

Seref Kalem

Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed S…

cond-mat.mtrl-sci2021★ 8 cited

Infrared spectroscopy of hydrogenated and chlorinated amorphous silicon

S. Kalem, R. Mostefaoui, J. Bourneix +1

The evolution is presented of infrared transmission spectra of hydrogenated and chlorinated amorphous silicon films versus the chlorine concentration and the annealing temperature.…

physics.app-ph2021★ 1 cited

1320 nm Light Source From Deuterium Treated Silicon

Seref Kalem

We report an efficient room temperature photon source at 1320 nm telecommunication wavelength from nanostructured silicon surface. The activation of this light source was realized…

cond-mat.mes-hall2015★ 8 cited

Optical characterization of dislocation free Ge and GeOI wafers

S. Kalem, I. Romandic, A. Theuwis

Optical properties of dislocations free state-of-the-art Germanium(Ge) and Germanium-oninsulator(GeOI) wafers have been characterized using Fourier transformed infrared spectroscop…

cond-mat.mes-hall2015★ 7 cited

Transformation of germanium to fluogermanates

S. Kalem, O. Arthursson, I. Romandic

The surface of a single crystal Germanium wafer was transformed to crystals of germanium fluorides and oxides upon exposure to a vapor of HF and HNO3 chemical mixture. Structure an…

cond-mat.mes-hall2015★ 25 cited

Controlled thinning and surface smoothening of silicon nanopillars

S Kalem, P Werner, B Nilsson +4

A convenient method has been developed to thin electron beam fabricated Silicon nanopillars under controlled surface manipulation by transforming the surface of the pillars to an o…

cond-mat.mes-hall2015★ 13 cited

Near-IR photoluminescence from Si/Ge nanowire grown silicon wafers: effect of HF treatment

Seref Kalem, Peter Werner, Vadim Talalaev

We present the room temperature (RT) near-infrared (NIR) photoluminescence (PL) properties of Si/Ge nanowire (NW) grown silicon wafers which were treated by vapor of HF:HNO3 chemic…

cond-mat.mes-hall2015

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

Seref Kalem, Orjan Arthursson, Peter Werner

In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measur…

cond-mat.mes-hall2015★ 10 cited

Photoluminescence from Silicon nanoparticles embedded in ammonium silicon hexafluoride

Seref Kalem, Peter Werner, Vadim Talalaev +3

Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embed…

cond-mat.mes-hall2015

Controlling photon emission from silicon for photonic applications

Seref Kalem

The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near…

cond-mat.mes-hall2011★ 35 cited

Black Silicon with high density and high aspect ratio nanowhiskers

S Kalem, P Werner, Ö Arthursson +5

Physical properties of black Silicon (b-Si) formed on Si wafers by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the ori…

cond-mat.mtrl-sci2004★ 29 cited

Synthesis of ammonium silicon fluoride cryptocrystals on silicon by dry etching

Seref Kalem

Cryptocrystal layers of ammonium silicon fluoride (NH4)2SiF6 were grown on silicon wafers by dry etching using the vapors of HF:HNO3 solution at room temperature. As-grown layers a…