18 citations
- Universidad Politécnica de MadridES3 papers
- Centre National de la Recherche ScientifiqueFR1 paper
- ESPCI ParisFR1 paper
- Imperial College LondonGB1 paper
- Institute of Electrical and Electronics EngineersUS1 paper
- Laboratoire Matériaux et Phénomènes QuantiquesFR1 paper
- Massachusetts Institute of TechnologyUS1 paper
- Sorbonne UniversitéFR1 paper
- Toshiba (Japan)JP1 paper
- Universidad de MálagaES1 paper
- Universidad de ValladolidES1 paper
- Université Paris CitéFR1 paper
7 papers
Purcell enhanced and tunable single-photon emission at telecom wavelengths from InAs quantum dots in circular photonic crystal resonators
Andrea Barbiero, Ginny Shooter, Joanna Skiba-Szymanska +8
Embedding semiconductor quantum dots into bullseye resonators has significantly advanced the development of bright telecom quantum light sources for fiber-based quantum networks. T…
Rb2Ti2O5 : a layered ionic conductor at the sub-micrometer scale
Valerio Digiorgio, Karen Sobnath, Maria Luisa Della Rocca +4
Over the past few years, ionic conductors have gained a lot of attention given the possibility to implement them in various applications such as supercapacitors, batteries or fuel…
Circuit Design for Predictive Maintenance
Taner Dosluoglu, Martin MacDonald
Industry 4.0 has become a driver for the entire manufacturing industry. Smart systems have enabled 30% productivity increases and predictive maintenance has been demonstrated to pr…
Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates
Pablo Caño, Manuel Hinojosa, Luis Cifuentes +6
A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilit…
Electronic and optical properties of SiGeSn alloys lattice-matched to Ge
Phoebe M. Pearce, Christopher A. Broderick, Michael P. Nielsen +2
We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of SiGeSn alloys lattice-m…
Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates
Ivan García, Laura Barrutia, Shabnam Dadgostar +3
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bot…