activity
20192021
most citedThinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates

18 citations · 44 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci202118 cited

Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates

Ivan García, Laura Barrutia, Shabnam Dadgostar +3

Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bot…

physics.app-ph2021

High-Low Refractive Index Stacks for Broadband Antireflection Coatings for Multijunction Solar Cells

GuoJiao Hou, Iván García, Ignacio Rey-Stolle

Antireflection coatings are an interesting challenge for multijunction solar cells due to their broadband spectrum absorption and the requirement of current matching of each subcel…

physics.app-ph20207 cited

Point-defects assisted Zn-diffusion in AlGaInP/GaInP systems during the MOVPE growth of inverted multijunction solar cells

Manuel Hinojosa, Iván García, Shabnam Dadgostar +1

We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the comparison of different structures that emulate the back-surface field (BSF) and base layers…

physics.app-ph20208 cited

On the Use of Graphene to Improve the Performance of Concentrator III-V Multijunction Solar Cells

Laura Barrutia, IvÁn Lombardero1, Mario Ochoa +6

Graphene has been intensively studied in photovoltaics focusing on emerging solar cells based on thin films, dye-sensitized, quantum dots, nanowires, etc. However, the typical effi…

physics.app-ph2020

Impact of spectral effects on photovoltaic energy production: A case study in the United States

José M. Ripalda, Daniel Chemisana, José M. Llorens +1

The time averaged efficiency of photovoltaic modules in the field is generally lower than the efficiency measured in the laboratory under standard testing conditions due to the com…

physics.app-ph201911 cited

Inverted rear-heterojunction GaInP solar cells using Te memory effect

Manuel Hinojosa, Iván García, Ignacio Rey-Stolle +1

Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of…