18 citations · 60 across the 6 of their papers we have counts for
7 papers
Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell
Manuel Hinojosa, Ivan Lombardero, Carlos Algora +1
The growth of heavily doped tunnel junctions in inverted metamorphic multijunction solar cells induces a strong diffusion of Zn via a point-defects-assisted mechanism. The redistri…
Hybrid III-V/SiGe solar cells on Si substrates and porous Si substrates
Pablo Caño, Manuel Hinojosa, Luis Cifuentes +6
A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilit…
Evidence of enhanced Zn-diffusion observed during the growth of Inverted Metamorphic Solar Cells
Manuel Hinojosa, Ivan Garcia, Ignacio Rey-Stolle +1
Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surfa…
Thinned GaInP/GaInAs/Ge solar cells grown with reduced cracking on Ge|Si virtual substrates
Ivan García, Laura Barrutia, Shabnam Dadgostar +3
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bot…
Point-defects assisted Zn-diffusion in AlGaInP/GaInP systems during the MOVPE growth of inverted multijunction solar cells
Manuel Hinojosa, Iván García, Shabnam Dadgostar +1
We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the comparison of different structures that emulate the back-surface field (BSF) and base layers…
Inverted rear-heterojunction GaInP solar cells using Te memory effect
Manuel Hinojosa, Iván García, Ignacio Rey-Stolle +1
Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of…