output
20082024
most citedLSST: from Science Drivers to Reference Design and Anticipated Data Products

3.5k citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2024★ 2 cited

Enhanced Electron Extraction in Co-Doped TiO2 Quantified by Drift-Diffusion Simulation for Stable CsPbI3 Solar Cells

Thomas W. Gries, Davide Regaldo, Hans Koebler +22

Solar cells based on inorganic perovskite CsPbI3 are promising candidates to resolve the challenge of operational stability in the field of perovskite photovoltaics. For stable ope…

cond-mat.mtrl-sci2023★ 4 cited

Photovoltaic potential of tin perovskites revealed through layer-by-layer investigation of optoelectronic and charge transport properties

Mahmoud H. Aldamasy, Artem Musiienko, Marin Rusu +15

Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processa…

cond-mat.mtrl-sci2022★ 1 cited

Non-linear diffusion of negatively charged excitons in WSe2 monolayer

D. Beret, L. Ren, C. Robert +10

We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial p…

cond-mat.mtrl-sci2022★ 37 cited

Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Dorian Beret, Ioannis Paradisanos, Ziyang Gan +17

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier…

cond-mat.mtrl-sci2019★ 8 cited

Quantitative Assessment of Carrier Density by Cathodoluminescence. II. GaAs nanowires

Hung-Ling Chen, Romaric De Lépinau, Andrea Scaccabarozzi +4

Precise control of doping in single nanowires (NWs) is essential for the development of NW-based devices. Here, we investigate a series of MBE-grown GaAs NWs with Be (p-type) and S…

cond-mat.mtrl-sci2019★ 14 cited

Quantitative Assessment of Carrier Density by Cathodoluminescence. I. GaAs thin films and modeling

Hung-Ling Chen, Andrea Scaccabarozzi, Romaric De Lépinau +5

Doping is a fundamental property of semiconductors and constitutes the basis of modern microelectronic and optoelectronic devices. Their miniaturization requires contactless charac…