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- Centre National de la Recherche ScientifiqueFR152 papers
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- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR24 papers
- Université Grenoble AlpesFR20 papers
- Florida State UniversityUS17 papers
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6 papers · 1 filter
High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications
Mansour Aouassa, Saud Algarni, Ibrahim Althobaiti +2
This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the ins…
Assessing Phonon Coherence Using Spectroscopy
Zhongwei Zhang, Yangyu Guo, Marc Bescond +3
As a fundamental physical quantity of thermal phonons, temporal coherence participates in a broad range of thermal and phononic processes, while a clear methodology for the measure…
Single G centers in silicon fabricated by co-implantation with carbon and proton
Yoann Baron, Alrik Durand, Tobias Herzig +11
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a s…
Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications
M. Ezzadeen, D. Bosch, B. Giraud +6
The Von-Neumann bottleneck is a clear limitation for data-intensive applications, bringing in-memory computing (IMC) solutions to the fore. Since large data sets are usually stored…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…
Optical properties of an ensemble of G-centers in silicon
C. Beaufils, W. Redjem, E. Rousseau +10
We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion…