Toshiba Nanoanalysis Corporation

most citedScrew dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes

32 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

A. Oshiyama1 · h 38
A. Tanaka1 · h 14
H. Amano1 · h 73
K. Chokawa1 · h 10
K. Shiraishi1 · h 40
K. Toda1 · h 2
N. Mayama1 · h 9
S. Usami1 · h 11
T. Nakano1 · h 3
Y. Harashima1 · h 16
Y. Honda1 · h 30
Y. Kangawa1 · h 21

collaborating institutions

Toshiba (Japan)JP2 papers
Diamond Light SourceGB1 paper
École PolytechniqueFR1 paper
Institute of Nanostructured MaterialsIT1 paper
Institute of Structure of MatterIT1 paper
Istituto Officina dei MaterialiIT1 paper
Japan Synchrotron Radiation Research InstituteJP1 paper
Kyushu UniversityJP1 paper
Nagoya UniversityJP1 paper
Nara Institute of Science and TechnologyJP1 paper
National Interuniversity Consortium for the Physical Sciences of MatterIT1 paper
Roma Tre UniversityIT1 paper

Showing cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2020★ 32 cited

Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes

Takashi Nakano, Yosuke Harashima, Kenta Chokawa +9

Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform…