activity
20032021
most citedScrew dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes

32 citations · 32 across the 1 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2021

Quasi-Ballistic Thermal Conduction in 6H-SiC

Zhe Cheng, Weifang Lu, Jingjing Shi +9

The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons tr…

cond-mat.mtrl-sci202032 cited

Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes

Takashi Nakano, Yosuke Harashima, Kenta Chokawa +9

Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform…

cond-mat.mtrl-sci2020

State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods

E. A. Evropeitsev, D. R. Kazanov, Y. Robin +7

Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still…

cond-mat.mtrl-sci2019

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Zhe Cheng, Yee Rui Koh, Abdullah Mamun +17

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is th…

cond-mat.mtrl-sci2003

Mie-resonances, infrared emission and band gap of InN

T. V. Shubina, S. V. Ivanov, V. N. Jmerik +10

Mie resonances due to scattering/absorption of light in InN containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of…