32 citations · 64 across the 4 of their papers we have counts for
4 papers
Beyond ab initio reaction simulator: an application to GaN metalorganic vapor phase epitaxy
Akira Kusaba, Shugo Nitta, Kenji Shiraishi +2
To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass spectrometry (TOF-MS) data applied to GaN metalorganic vapor…
Exploration of a new reconstructed structure on GaN(0001) surface by Bayesian optimization
Akira Kusaba, Yoshihiro Kangawa, Tetsuji Kuboyama +1
GaN(0001) surfaces with Ga- and H-adsorbates are fundamental stages for epitaxial growth of semiconductor thin films. We explore stable surface structures with nanometer scale by t…
Polarization doping ab initio verification of the concept charge conservation and nonlocality
Ashfaq Ahmad, Pawel Strak, Pawel Kempisty +10
In this work, we study the emergence of polarization doping in AlxGa1-xN layers with graded composition from a theoretical viewpoint. We demonstrate that the charge conservation la…
Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
Takashi Nakano, Yosuke Harashima, Kenta Chokawa +9
Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform…