32 citations · 38 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2022★ 6 cited
Beyond ab initio reaction simulator: an application to GaN metalorganic vapor phase epitaxy
Akira Kusaba, Shugo Nitta, Kenji Shiraishi +2
To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass spectrometry (TOF-MS) data applied to GaN metalorganic vapor…
cond-mat.mtrl-sci2020★ 32 cited
Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
Takashi Nakano, Yosuke Harashima, Kenta Chokawa +9
Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform…