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Showing cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2016
Diffusion of Hydrogen in Proton Implanted Silicon: Dependence on the Hydrogen Concentration
Martin Faccinelli, Stefan Kirnstoetter, Moriz Jelinek +4
The reported diffusion constants for hydrogen in silicon vary over six orders of magnitude. This spread in measured values is caused by the different concentrations of defects in t…
cond-mat.mtrl-sci2016★ 18 cited
Self-organized Growth of Graphene Nanomesh with Increased Gas Sensitivity
Matthias König, Günther Ruhl, Joerg-Martin Batke +1
A bottom-up chemical vapor deposition (CVD) process for the growth of graphene nanomesh films is demonstrated. The process relies on silicon nanospheres to block nucleation sites f…