30 citations · 36 across the 3 of their papers we have counts for
3 papers
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
Maximilian W. Feil, Magdalena Weger, Hans Reisinger +10
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are g…
Effects of nitridation on SiC/SiO structures studied by hard X-ray photoelectron spectroscopy
Judith Berens, Sebastian Bichelmaier, Nathalie K. Fernando +11
SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperfo…
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO interface
Gernot Gruber, Jonathon Cottom, Robert Meszaros +5
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects…