Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

Maximilian W. Feil, Magdalena Weger, Hans Reisinger +10

Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are g…