2 papers
cond-mat.mtrl-sci2016
Diffusion of Hydrogen in Proton Implanted Silicon: Dependence on the Hydrogen Concentration
Martin Faccinelli, Stefan Kirnstoetter, Moriz Jelinek +4
The reported diffusion constants for hydrogen in silicon vary over six orders of magnitude. This spread in measured values is caused by the different concentrations of defects in t…
cond-mat.soft2010
Where is liquid-vapor interface located in solutions?
R. Tsekov, B. Cohen, B. Radoev +1
Two-component liquid-vapor systems are modeled as two bulk phases divided by a two-dimensional surface phase and the mass and momentum balances are theoretically studied. Comparing…