265 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Fudan UniversityCN33 papers
- Chinese Academy of SciencesCN12 papers
- Shanghai Fudan Microelectronics (China)CN7 papers
- State Key Laboratory of Surface Physics7 papers
- Collaborative Innovation Center of Advanced MicrostructuresCN5 papers
- East China Normal UniversityCN5 papers
- Shanghai Institute of Technical PhysicsCN5 papers
- Iowa State UniversityUS4 papers
- Ningbo Institute of Industrial TechnologyCN4 papers
- Ames National LaboratoryUS3 papers
- Nanjing UniversityCN3 papers
- National Laboratory of Solid State Microstructures3 papers
14 papers · 1 filter
Memristive switching in the surface of a charge-density-wave topological semimetal
Jianwen Ma, Xianghao Meng, Binhua Zhang +20
Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, e…
Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection
Wenrui Zhang, Wei Wang, Jinfu Zhang +7
Incorporating emerging ultrawide bandgap semiconductors with a metal-semiconductor-metal (MSM) architecture is highly desired for deep-ultraviolet (DUV) photodetection. However, sy…
Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations
Shanshan Wang, Menglin Huang, Yu-Ning Wu +6
The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations…
DASP: Defect and Dopant ab-initio Simulation Package
Menglin Huang, Zhengneng Zheng, Zhenxing Dai +5
In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation…
From Anomalous to Normal: Temperature Dependence of the Band Gap in Two-Dimensional Black Phosphorus
Shenyang Huang, Fanjie Wang, Guowei Zhang +11
The temperature dependence of the band gap is crucial to a semiconductor. Bulk black phosphorus (BP) is known to exhibit an anomalous behavior. Through optical spectroscopy, here w…
Sub-picosecond photo-induced displacive phase transition in two-dimensional MoTe
Bo Peng, Hao Zhang, Weiwen Chen +6
Photo-induced phase transitions (PIPTs) provide an ultrafast, energy-efficient way for precisely manipulating the topological properties of transition-metal ditellurides, and can b…
Electronic, optical and transport properties of van der Waals Transition-metal Dichalcogenides Heterostructures: A First-principle Study
Ke Xu, Yuanfeng Xu, Hao Zhang +8
Two-dimensional (2D) transition-metal dichalcogenide (TMD) MX (M = Mo, W; X= S, Se, Te) possess unique properties and novel applications. In this work, we perform first-princip…
Electronic, transport and optical properties of monolayer and GeSe: A first-principles study
Yuanfeng Xu, Hao Zhang, Hezhu Shao +6
The extraordinary properties and the novel applications of black phosphorene induce the research interest on the monolayer group-IV monochalcogenides. Here using the first-principl…
Functionality-directed Screening of Pb-free Hybrid Organic-inorganic Perovskites with Desired Intrinsic Photovoltaic Functionalities
Dongwen Yang, Jian Lv, Xingang Zhao +5
The material class of hybrid organic-inorganic perovskites has risen rapidly from a virtually unknown material in photovoltaic applications a short 7 years ago into a ~20% efficien…
Stability and Strength of Atomically Thin Borophene from First Principles Calculations
Bo Peng, Hao Zhang, Hezhu Shao +5
A new two-dimensional (2D) material, borophene (2D boron sheet), has been grown successfully recently on single crystal Ag substrates by two parallel experiments [Mannix \textit{et…
Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films
Xiang Yuan, Peihong Cheng, Longqiang Zhang +11
Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries h…
ReS2-based field-effect transistors and photodetectors
Enze Zhang, Yibo Jin, Xiang Yuan +7
Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical…
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Xiang Yuan, Lei Tang, Peng Wang +12
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly…
Effects of Side Groups on Kinetics of Charge Carrier Recombination in Dye Molecule-Doped Multilayer Organic Light-Emitting Diodes
Shengwei Shi, Feng Gao, Zhengyi Sun +3
The kinetics of the charge carrier recombination in dye molecule-doped multilayer organic light-emitting diodes (OLEDs) was quantified by transient electroluminescence (EL). Three…