4 citations · 8 across the 5 of their papers we have counts for
5 papers
A Generalized Tunneling Current Formula for Metal/Insulator Heterojunctions under Large Bias and Finite Temperature
Zenghua Cai, Menglin Huang, Peng Zhou +1
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential b…
MoS Dual-gate Transistors with Electrostatically Doped Contacts
Fuyou Liao, Yaocheng Sheng, Zhongxun Guo +15
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties f…
A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Fuyou Liao, Jianan Deng, Xinyu Chen +13
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported…
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Fuyou Liao, Zhongxun Guo, Yin Wang +13
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…
Magnetotransport properties of Cd3As2 nanostructures
Enze Zhang, Yanwen Liu, Weiyi Wang +5
Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Ex…