265 citations · 551 across the 12 of their papers we have counts for
12 papers
A Generalized Tunneling Current Formula for Metal/Insulator Heterojunctions under Large Bias and Finite Temperature
Zenghua Cai, Menglin Huang, Peng Zhou +1
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential b…
Ultrafast non-volatile flash memory based on van der Waals heterostructures
Lan Liu, Yi Ding, Jiayi Li +2
Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the inform…
MoS Dual-gate Transistors with Electrostatically Doped Contacts
Fuyou Liao, Yaocheng Sheng, Zhongxun Guo +15
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties f…
A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Fuyou Liao, Jianan Deng, Xinyu Chen +13
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported…
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Fuyou Liao, Zhongxun Guo, Yin Wang +13
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…
Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy
Xiang Yuan, Lei Tang, Shanshan Liu +12
Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication…
Direct observation of Landau level resonance and mass generation in Dirac semimetal Cd3As2 thin films
Xiang Yuan, Peihong Cheng, Longqiang Zhang +11
Three-dimensional topological Dirac semimetals have hitherto stimulated unprecedented research interests as a new class of quantum materials. Breaking certain types of symmetries h…
ReS2-based field-effect transistors and photodetectors
Enze Zhang, Yibo Jin, Xiang Yuan +7
Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical…
Magnetotransport properties of Cd3As2 nanostructures
Enze Zhang, Yanwen Liu, Weiyi Wang +5
Three-dimensional (3D) topological Dirac semimetal is a new kind of material that has a linear energy dispersion in 3D momentum space and can be viewed as an analog of graphene. Ex…
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Xiang Yuan, Lei Tang, Peng Wang +12
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with superior advantages of being flexible, transparent and highly…
Tunable charge-trap memory based on few-layer MoS2
Enze Zhang, Weiyi Wang, Cheng Zhang +6
Charge-trap memory with high-\k dielectric materials is considered to be a promising candidate for next-generation memory devices. Ultrathin layered two-dimensional (2D) materials…
The critical temperature regions in resistive switching
L. Chen, P. Zhou, Q. Q. Sun +3
Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a re…