265 citations · 551 across the 12 of their papers we have counts for
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cond-mat.mes-hall2021★ 1 cited
A Generalized Tunneling Current Formula for Metal/Insulator Heterojunctions under Large Bias and Finite Temperature
Zenghua Cai, Menglin Huang, Peng Zhou +1
The Fowler-Nordheim tunneling current formula has been widely used in the design of devices based on metal/insulator (metal/semiconductor) heterojunctions with triangle potential b…
cond-mat.mes-hall2016★ 171 cited
Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy
Xiang Yuan, Lei Tang, Shanshan Liu +12
Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication…
cond-mat.mes-hall2011
The critical temperature regions in resistive switching
L. Chen, P. Zhou, Q. Q. Sun +3
Critical temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 K to 300 K, the resistive switching appears at 60 K, and then a re…