Showing 2001 · cond-mat.mtrl-sciShow all

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cond-mat.mtrl-sci2001★ 27 cited

Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties

J. Sadowski, R. Mathieu, P. Svedlindh +9

We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonma…

cond-mat.mtrl-sci2001★ 46 cited

Photoemission studies of GaMnAs: Mn-concentration dependent properties

H. Asklund, L. Ilver, J. Kanski +2

Using angle-resolved photoemission, we have investigated the development of the electronic structure and the Fermi level pinnning in GaMnAs with Mn concentrations in…

cond-mat.mtrl-sci2001★ 184 cited

Light and electric field control of ferromagnetism in magnetic quantum structures

H. Boukari, P. Kossacki, M. Bertolini +6

A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a mo…

cond-mat.mtrl-sci2001★ 94 cited

Ferromagnetism of magnetic semiconductors--Zhang-Rice limit

T. Dietl, F. Matsukura, H. Ohno

It is suggested that p-d hybridization contributes significantly to the hole binding energy E_b of Mn acceptors in III-V compounds, leading in an extreme case to the formation of Z…

cond-mat.mtrl-sci2001★ 6 cited

Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures

T. Andrearczyk, J. Jaroszynski, G. Karczewski +6

We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to…

cond-mat.mtrl-sci2001★ 93 cited

Magnetic domains in III-V magnetic semiconductors

T. Dietl, Jürgen König, A. H. MacDonald

Recent progress in theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics a…