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4 papers · 2 filters
Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers
Christopher A. Broderick, Simone Mazzucato, Hélène Carrère +9
The electron Landé g factor () is investigated both experimentally and theoretically in a series of GaBiAs/GaAs strained epitaxial layers, for bismuth composit…
Complex optical signatures from quantum dot nanostructures and behavior in inverted pyramidal recesses
G. Juska, V. Dimastrodonato, L. O. Mereni +6
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5 um pitch pyramida…
Unusual nanostructures of "lattice matched" InP on AlInAs
A. Gocalinska, M. Manganaro, G. Juska +6
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of…
Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells
Muhammad Usman, Eoin P. O'Reilly
Large-supercell tight-binding calculations are presented for GaBiAs/GaAs single quantum wells (QWs) with Bi fractions of 3.125% and 12.5%. Our results highlight s…