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- Jilin UniversityCN67 papers
- National Academy of Sciences of UkraineUA23 papers
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- V. N. Karazin Kharkiv National UniversityUA8 papers
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15 papers · 1 filter
Variant Plateau Law in Atomically Thin Transition Metal Dichalcogenide Dome Networks
Boqing Liu, Tanju Yildirim, Tieyu Lv +10
Since its fundamental inception from soap bubbles, Plateau law has sparked extensive research in equilibrated states. However, most studies primarily relied on liquids, foams or ce…
Inert gas as electronic impurity in semiconductors: The case for active infrared absorption in silicon
Nian-Ke Chen, Yu-Chen Gao, Ji-Hong Zhao +5
Inert (noble gas) elements are extremely inactive to surrounding chemical environment and are frequently employed as protective gas in various semiconductor fabrication processes.…
Inorganic Crystal Structure Prototype Database based on Unsupervised Learning of Local Atomic Environments
Shulin Luo, Bangyu Xing, Muhammad Faizan +9
Recognition of structure prototypes from tremendous known inorganic crystal structures has been an important subject beneficial for material science research and new materials desi…
Photoinduced ultrafast transition of the local correlated structure in chalcogenide phase-change materials
Yingpeng Qi, Nianke Chen, Thomas Vasileiadis +4
Revealing the bonding and time-evolving atomic dynamics in functional materials with complex lattice structures can update the fundamental knowledge on rich physics therein, and al…
JAMIP: an artificial-intelligence aided data-driven infrastructure for computational materials informatics
Xin-Gang Zhao, Kun zhou, Bangyu Xing +13
Materials informatics has emerged as a promisingly new paradigm for accelerating materials discovery and design. It exploits the intelligent power of machine learning methods in ma…
Evidence of Pure Spin-Current Generated by Spin Pumping in Interface Localized States in Hybrid Metal-Silicon-Metal Vertical Structures
C. Cerqueira, J. Y. Qin, H. Dang +20
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this…