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20052025
most citedWavelength-scale stationary-wave integrated Fourier-transform spectrometry

229 citations

Showing 2013Show all

6 papers · 1 filter

cond-mat.mes-hall2013

Planning the electron traffic in semiconductor networks: A mesoscopic analog of the Braess paradox encountered in road networks

S. Huant, S. Baltazar, P. Liu +7

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network…

hep-ex2013★ 34 cited

Search for weakly interacting sub-eV particles with the OSQAR laser-based experiment: results and perspectives

P. Pugnat, R. Ballou, M. Schott +19

Recent theoretical and experimental studies highlight the possibility of new fundamental particle physics beyond the Standard Model that can be probed by sub-eV energy experiments.…

cond-mat.mes-hall2013★ 28 cited

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow +7

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling bet…

cond-mat.mes-hall2013★ 22 cited

Scanning Gate Spectroscopy of transport across a Quantum Hall Nano-Island

F. Martins, S. Faniel, B. Rosenow +7

We explore transport across an ultra-small Quantum Hall Island (QHI) formed by closed quan- tum Hall edge states and connected to propagating edge channels through tunnel barriers.…

cond-mat.mes-hall2013★ 95 cited

Broken Symmetries, Zero-Energy Modes, and Quantum Transport in Disordered Graphene: From Supermetallic to Insulating Regimes

Alessandro Cresti, Frank Ortmann, Thibaud Louvet +2

The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distrib…

cond-mat.mes-hall2013★ 61 cited

Atomistic Boron-Doped Graphene Field Effect Transistors: A Route towards Unipolar Characteristics

Paolo Marconcini, Alessandro Cresti, Francois Triozon +5

We report fully quantum simulations of realistic models of boron-doped graphene-based field effect transistors, including atomistic details based on DFT calculations. We show that…