Showing 2008 · cond-mat.mes-hallShow all

19 papers · 2 filters

cond-mat.mes-hall2008★ 96 cited

Fractional charges on an integer quantum Hall edge

E. Berg, Y. Oreg, E. -A. Kim +1

We propose ways to create and detect fractionally charged excitations in \emph{integer} quantum Hall edge states. The charge fractionalization occurs due to the Coulomb interaction…

cond-mat.mes-hall2008★ 92 cited

Crossover from quantum to Boltzmann transport in graphene

Shaffique Adam, Piet W. Brouwer, S. Das Sarma

We compare a fully quantum mechanical numerical calculation of the conductivity of graphene to the semiclassical Boltzmann theory. Considering a disorder potential that is smooth o…

cond-mat.mes-hall2008★ 83 cited

Measurement of discrete energy-level spectra in individual chemically-synthesized gold nanoparticles

F. Kuemmeth, K. I. Bolotin, S. -F. Shi +1

We form single-electron transistors from individual chemically-synthesized gold nanoparticles, 5-15 nm in diameter, with monolayers of organic molecules serving as tunnel barriers.…

cond-mat.mes-hall2008★ 133 cited

Corner Junction as a Probe of Helical Edge States

Chang-Yu Hou, Eun-Ah Kim, Claudio Chamon

We propose and analyze inter-edge tunneling in a quantum spin Hall corner junction as a means to probe the helical nature of the edge states. We show that electron-electron interac…

cond-mat.mes-hall2008★ 38 cited

Spin-Torque-Induced Rotational Dynamics of a Magnetic Vortex Dipole

G. Finocchio, O. Ozatay, L. Torres +3

We study, both experimentally and by numerical modeling, the magnetic dynamics that can be excited in a magnetic thin-film nanopillar device using the spin torque from a spatially…

cond-mat.mes-hall2008★ 44 cited

Localization in an Inhomogeneous Quantum Wire

A. D. Guclu, C. J. Umrigar, Hong Jiang +1

We study interaction-induced localization of electrons in an inhomogeneous quasi-one-dimensional system--a wire with two regions, one at low density and the other high. Quantum Mon…

cond-mat.mes-hall2008★ 33 cited

Strain and field modulation in bilayer graphene band structure

Hassan Raza, Edwin C. Kan

Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using…

cond-mat.mes-hall2008★ 16 cited

Anomalous Conductance Oscillations and Half-Metallicity in Atomic Ag-O Chains

Mikkel Strange, Kristian S. Thygesen, James P. Sethna +1

Using spin density functional theory we study the electronic and magnetic properties of atomically thin, suspended chains containing silver and oxygen atoms in an alternating seque…

cond-mat.mes-hall2008★ 364 cited

Imaging mechanical vibrations in suspended graphene sheets

D. Garcia-Sanchez, A. M. van der Zande, A. San Paulo +3

We carried out measurements on nanoelectromechanical systems based on multilayer graphene sheets suspended over trenches in silicon oxide. The motion of the suspended sheets was el…

cond-mat.mes-hall2008★ 7 cited

Temperature and magnetic-field dependence of the quantum corrections to the conductance of a network of quantum dots

Joern N. Kupferschmidt, Piet W. Brouwer

We calculate the magnetic-field and temperature dependence of all quantum corrections to the ensemble-averaged conductance of a network of quantum dots. We consider the limit that…

cond-mat.mes-hall2008★ 690 cited

Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene

Paul A. George, Jared Strait, Jahan Dawlaty +4

The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The con…

cond-mat.mes-hall2008★ 117 cited

Tunneling Spectra of Individual Magnetic Endofullerene Molecules

Jacob E. Grose, Eugenia S. Tam, Carsten Timm +6

The manipulation of single magnetic molecules may enable new strategies for high-density information storage and quantum-state control. However, progress in these areas depends on…

cond-mat.mes-hall2008★ 8 cited

Nonvolatile memory with molecule-engineered tunneling barriers

Tuo-Hung Hou, Hassan Raza, Kamran Afshari +2

We report a novel field-sensitive tunneling barrier by embedding C60 in SiO2 for nonvolatile memory applications. C60 is a better choice than ultra-small nanocrystals due to its mo…

cond-mat.mes-hall2008★ 19 cited

Electrical transport in two dimensional electron and hole gas on Si(001)-(2x1) surface

Hassan Raza, Tehseen Z. Raza, Edwin C. Kan

Si(001)-(21) surface is one of the many two-dimensional systems of scientific and applied interest. It has two surface state bands (1) anti-bonding pi* band, which has acce…

cond-mat.mes-hall2008★ 217 cited

Armchair graphene nanoribbons: Electronic structure and electric field modulation

Hassan Raza, Edwin C. Kan

We report electronic structure and electric field modulation calculations in the width direction for armchair graphene nanoribbons (acGNRs) using a semi-empirical extended Huckel t…

cond-mat.mes-hall2008★ 4 cited

An atomistic quantum transport solver with dephasing for field-effect transistors

Hassan Raza, Edwin C. Kan

Extended Huckel theory (EHT) along with NEGF (Non-equilibrium Green's function formalism) has been used for modeling coherent transport through molecules. Incorporating dephasing h…

cond-mat.mes-hall2008★ 590 cited

Coupling of Spin and Orbital Motion of Electrons in Carbon Nanotubes

F. Kuemmeth, S. Ilani, D. C. Ralph +1

Electrons in atoms possess both spin and orbital degrees of freedom. In non-relativistic quantum mechanics, these are independent, resulting in large degeneracies in atomic spectra…

cond-mat.mes-hall2008★ 17 cited

Anderson localization from classical trajectories

Piet W. Brouwer, Alexander Altland

We show that Anderson localization in quasi-one dimensional conductors with ballistic electron dynamics, such as an array of ballistic chaotic cavities connected via ballistic cont…

cond-mat.mes-hall2008★ 30 cited

An Extended Huckel Theory based Atomistic Model for Graphene Nanoelectronics

Hassan Raza, Edwin C. Kan

An atomistic model based on the spin-restricted extended Huckel theory (EHT) is presented for simulating electronic structure and I-V characteristics of graphene devices. The model…